ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,391, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Image sensor with dual trench isolation structure" was invented by Cheng-Hsien Chou (Tainan, Taiwan), Sheng-Chau Chen (Tainan, Taiwan), Tzu-Jui Wang (Fengshan, Taiwan) and Sheng-Chan Li (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side...