US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "High-density 3D-DRAM cell with scaled capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,076, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High-density 3D-DRAM cell with scaled capacitors" was invented by Mauricio Manfrini (Zhubei, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a semiconductor substrate, and a pair of metal gates extends upwards from the semiconductor substrate. First and second channel regions are disposed between inner sidewalls of the pair of metal gates. First and second drain regions are disposed between the inner sidewalls of the pair of metal gates and are disposed directly over the firs...