US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Gallium nitride-based devices and methods of testing thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,398, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gallium nitride-based devices and methods of testing thereof" was invented by Yi-An Lai (Taipei, Taiwan), Pen Chieh Yu (Hsinchu, Taiwan), Chan-Hong Chern (Palo Alto, Calif.) and Cheng-Hsiang Hsieh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor comprising: a plurality of layers, wherein each of the plurality of layers has at least one Group III-V compound material; a gate electrode operatively coupled to at least one of the plurality of layers; a source electrode disposed on a first side ...