US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Fluorine incorporation method for nanosheet" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,359, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fluorine incorporation method for nanosheet" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Mao-Lin Huang (Hsinchu, Taiwan), Lung-Kun Chu (New Taipei, Taiwan), Huang-Lin Chao (Hillsboro, Ore.) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a plurality of nanostructures over a substrate; etching the plurality of nanostructures to form recesses; forming source/drain regions in the recesses; removing first nanostructures of the plurality of nanostructures leaving second nanostructures of the ...