US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "FinFET SRAM cells with dielectric fins" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,070, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"FinFET SRAM cells with dielectric fins" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An structure includes: first, second, third, fourth, and fifth dielectric fins disposed in this order along a first direction and oriented lengthwise along a second direction; a first semiconductor fin structure disposed between the first and the second dielectric fins; a second semiconductor fin structure disposed between the fourth and the fifth dielectric fins; a third semiconductor fin structure disposed...