US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Etch stop layer for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,393, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Etch stop layer for semiconductor devices" was invented by Szu-Ping Tung (Taipei, Taiwan), Jen-Hung Wang (Hsinchu County, Taiwan) and Shing-Chyang Pan (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first conductive feature over a portion of the substrate, and an etch stop layer over the substrate and the first conductive feature. The etch stop layer includes a silicon-containing dielectric (SCD) layer and a metal-containing dielectric (MCD) layer over the SCD layer. The semicon...