US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 21 for "Electrostatic discharge circuits and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,186, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Electrostatic discharge circuits and methods for operating the same" was invented by Tzu-Heng Chang (New Taipei, Taiwan), Hsin-Yu Chen (Hsinchu, Taiwan) and Pin-Hsin Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides electrostatic discharge circuits and structures and methods for operating the electrostatic discharge circuits and structures. A circuit includes a first transistor and a second transistor. Each of the first transistor and second transistor includes a drain, a source, and a gate. ...