US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Drain side recess for back-side power rail device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,159, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Drain side recess for back-side power rail device" was invented by Huan-Chieh Su (Tianzhong Township, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan) and Kuo-Cheng Chiang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor transistor device includes forming a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The channel structure is for...