US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 21 for "Dielectric fins with different dielectric constants and sizes in different regions of a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,164, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Dielectric fins with different dielectric constants and sizes in different regions of a semiconductor device" was invented by Min-Yann Hsieh (Kaohsiung, Taiwan), Hua Feng Chen (Hsinchu, Taiwan) and Jhon Jhy Liaw (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes. A first epi-layer and a second epi-layer are each located in a first region of the semiconductor device. A first dielectric fin is located between the first epi-layer and the second epi-layer. The first dielectric fin has a first diele...