ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,203, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Deep trench isolation structures resistant to cracking" was invented by Ming-Chi Wu (Kaohsiung, Taiwan), Chun-Chieh Fang (Hsinchu, Taiwan), Bo-Chang Su (Tainan, Taiwan), Chien Nan Tu (Kaohsiung, Taiwan), Yu-Lung Yeh (Kaohsiung, Taiwan), Kun-Yu Lin (Tainan, Taiwan) and Shih-Shiung Chen (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric lay...