US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Uniform gate width for nanostructure devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,305, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Uniform gate width for nanostructure devices" was invented by Jui-Chien Huang (Hsinchu, Taiwan), Shih-Cheng Chen (New Taipei, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Zhi-Chang Lin (Hsinchu County, Taiwan), Jung-Hung Chang (Hsinchu, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Shi Ning Ju (Hsinchu, Taiwan) and Guan-Lin Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of ...