US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Test structure for void and topography monitoring in a flash memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,660, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Test structure for void and topography monitoring in a flash memory device" was invented by Ken-Ying Liao (Tainan, Taiwan), Chih-Wei Sung (Kaohsiung, Taiwan), Tzu-Pin Lin (Tainan, Taiwan), Huai-jen Tung (Tainan, Taiwan), Po-Zen Chen (Tainan, Taiwan), Yen-Jou Wu (Tainan, Taiwan) and Yung-Lung Yang (Chiayi, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory region including an array of memory cell devices, and a test region including a test memory cell structure. The test memory cell structure includes a f...