US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Structure of three-dimensional memory array" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,227, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure of three-dimensional memory array" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Feng-Cheng Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memory array includes a tableland feature formed with multiple 3D memory sub-arrays that are arranged in an X-axis direction. Each 3D memory sub-array includes multiple memory cells that are distributed in multiple columns arranged in the X-axis direction, multiple bit lines extending in a Z-axis direction, multiple source lines extending in the Z-axis direction, an...