US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Structure having gate spacers with projecting portions extending into a gate dielectric" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,608, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure having gate spacers with projecting portions extending into a gate dielectric" was invented by Yu-Jiun Peng (Hsinchu, Taiwan), Hsiu-Hao Tsao (Taichung, Taiwan), Shu-Han Chen (Hsinchu, Taiwan), Chang-Jhih Syu (Hsinchu, Taiwan), Kuo-Feng Yu (Zhudong Township, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan), Chih-Hao Yu (Tainan, Taiwan) and Chang-Yun Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a structure includes: a semiconductor substrate; a gate spacer over the semiconductor substrate, the gate spacer ...