US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Strained nanosheets on silicon-on-insulator substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,269, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Strained nanosheets on silicon-on-insulator substrate" was invented by Ding-Kang Shih (New Taipei, Taiwan), Chung-Liang Cheng (Changhua County, Taiwan) and Pang-Yen Tsai (Jhu-bei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A strain-relaxed silicon/silicon germanium (Si/SiGe) bi-layer can be used as a foundation for constructing strained channel transistors in the form of nanosheet gate all-around field effect transistors (GAAFETs). The bi-layer can be formed using a modified silicon-on-insulator process. A superlattice can then be epita...