ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,268, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Source and drain epitaxial layers" was invented by Wen-Hsien Tu (Hsinchu, Taiwan), Chee-Wee Liu (Taipei, Taiwan) and Fang-Liang Lu (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to semiconductor structures with source/drain epitaxial stacks having a low-melting point top layer and a high-melting point bottom layer. For example, a semiconductor structure includes a gate structure disposed on a fin and a recess formed in a portion of the fin not covered by the gate structure. Further, the semico...