US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Semiconductor electrostatic discharge protection device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,323, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor electrostatic discharge protection device" was invented by Sheng-Fu Hsu (Hsinchu, Taiwan), Chen-Yi Lee (Keelung, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Shih-Fan Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor ESD protection device includes a pair of source regions, a pair of gate structures, a drain region, a plurality of first conductive contacts, a plurality of second conductive contacts, a plurality of third conductive contacts, and a dummy structure. The pair of gate structures are di...