US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,602, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Wan-Yi Kao (Hsinchu, Taiwan), Chunyao Wang (Hsinchu, Taiwan) and Yung-Cheng Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and methods of forming the same are described. In some embodiments, the method includes forming a dielectric layer, which includes forming an as deposited layer using an atomic layer deposition process, which includes flowing a silicon source precursor into a process chamber at a first flow r...