US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,271, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Chun-Sheng Liang (Changhua, Taiwan) and Hong-Chih Chen (Changhua, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain (S/D) region disposed over a substrate, a second S/D region disposed over the substrate, a dielectric wall disposed between the first and second S/D regions, a first conductive contact disposed over and electrically conn...