US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Semiconductor device and methods of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,254, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and methods of forming same" was invented by Chih-Yu Ma (Hsinchu, Taiwan), Shahaji B. More (Hsinchu, Taiwan), Yi-Min Huang (Tainan, Taiwan) and Shih-Chieh Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin,...