US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Semiconductor device and methods of formation" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,292, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and methods of formation" was invented by Keng-Wei Lin (New Taipei, Taiwan), Chia-Chi Yu (New Taipei, Taiwan), Chun-Lung Ni (Tainan, Taiwan) and Jui Fu Hsieh (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A two-step etch technique is used in a continuous polysilicon on oxide definition edge (CPODE) recess process to form a recess in which the CPODE structure is to be formed. The two-step process includes performing a first etch operation using an isotropic etch technique, in which a recess in a dummy gate struc...