ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,601, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of forming thereof" was invented by Han-Pin Chung (Fongshan, Taiwan) and Chi-Kang Liu (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming a semiconductor device include forming a dielectric material, performing a wet oxidation treatment on the dielectric material, and performing a dry anneal on the dielectric material. The dielectric material may be a flowable material. The wet oxidation treatment may include an acid and oxidizer mixture."
The patent was fil...