US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,283, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Chih-Hao Wang (Hsinchu County, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Yu-Xuan Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first semiconductor layer over a substrate; forming a dummy material covering a first sidewall of the first semiconductor layer; forming source/drain epitaxy structures over the substrate and in contact with the first semiconductor layer; forming an interfacial layer on a top surface and a secon...