ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,275, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by Tien-Lu Lin (Hsinchu, Taiwan) and Jung-Hung Chang (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate. A first semiconductor fin and a second semiconductor fin are over the substrate, wherein an upper portion of the second semiconductor fin and a lower portion of the second semiconductor fin are made of different materials. A first epitaxy structure is over the first semiconductor fin. A second epitaxy structure is in contac...