US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Multi-gate devices and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,261, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate devices and method of forming the same" was invented by Ming-Lung Cheng (Kaohsiung County, Taiwan), Huang-Hsuan Lin (Hsinchu, Taiwan) and Chih Chieh Yeh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each channel member of the vertical stack of channel members, a dielectric feature disposed...