US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "MOSFET device structure with air-gaps in spacer and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,289, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"MOSFET device structure with air-gaps in spacer and methods for forming the same" was invented by Gulbagh Singh (Tainan, Taiwan), Po-Jen Wang (Taichung, Taiwan) and Kun-Tsang Chuang (Miaoli, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device and method of making the same are disclosed. The transistor device includes one or more air gaps in one or more sidewall spacers. The one or more air gaps may be located adjacent the gate and/or above the source or drain regions of the device. Various embodiments may include different co...