US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,294, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistor" was invented by Jen-Chun Chou (Taoyuan, Taiwan) and Tung-Wen Cheng (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method for manufacturing a semiconductor device, a fin structure is formed over a substrate, an isolation insulating layer is formed over the substrate such that an upper portion of the fin structure protrudes from the isolation insulating layer, a first dielectric layer is formed on the upper por...