US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,284, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Memory device and method for forming the same" was invented by Hsin-Wen Su (Yunlin County, Taiwan), Yu-Kuan Lin (Taipei, Taiwan), Lien-Jung Hung (Taipei, Taiwan), Ping-Wei Wang (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, an active region, a first gate structure, a second gate structure, a first word line, and a second word line. The active region protrudes from a top surface of the substrate. The active region has at least one ring structure, in wh...