ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,216, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory device" was invented by Chien Hui Huang (Tainan, Taiwan), Kao-Cheng Lin (Taipei, Taiwan), Wei Min Chan (New Taipei, Taiwan), Shang Lin Wu (Hsinchu County, Taiwan), Chia-Chi Hung (Hsinchu, Taiwan), Wei-Cheng Wu (Hsinchu, Taiwan), Chia-Che Chung (Hsinchu, Taiwan), Pei-Yuan Li (New Taipei, Taiwan), Chien-Chen Lin (Kaohsiung, Taiwan), Yung-Ning Tu (Changhua County, Taiwan) and Yen Lin Chung (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided which includes a first memory cell including a first transist...