ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,210, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory cell and method" was invented by Meng-Han Lin (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Chi On Chui (Hsinchu, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An improved memory cell architecture including a nanostructure field-effect transistor (nano-FET) and a horizontal capacitor extending at least partially under the nano-FET and methods of forming the same are disclosed. In an embodiment, semiconductor device includes a channel structure over a semiconduc...