US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Interconnect structures with conductive carbon layers" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,680, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structures with conductive carbon layers" was invented by Mrunal Abhijith Khaderbad (Hsinchu, Taiwan) and Wei-Yen Woon (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) with a semiconductor device and an interconnect structure with carbon layers and methods of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a source/drain region on the fin structure, forming a contact structure on the S/D region, forming an oxide layer on the contact struc...