US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Ferroelectric memory device and memory array" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,230, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device and memory array" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Hsinchu County, Taiwan) and Sai-Hooi Yeong (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device and a memory array are provided. The ferroelectric memory device includes a word line; a pair of source/drain electrodes, a channel layer, a work function layer and a ferroelectric layer. The source/drain electrodes are disposed at opposite sides of the word line, and elevated from the word line. Th...