ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,650, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Etch stop layer for memory device formation" was invented by Sheng-Huang Huang (Hsinchu, Taiwan), Chung-Chiang Min (Zhubei, Taiwan), Harry-Hak-Lay Chuang (Zhubei, Taiwan), Hung Cho Wang (Taipei, Taiwan) and Sheng-Chang Chen (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip in some embodiments. The integrated chip includes an inter-level dielectric (ILD) laterally surrounding a memory device. One or more sidewall spacers are arranged along opposing sides of the memory device....