US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Electrostatic discharge protection circuit and semiconductor circuit" (Taiwanese, Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,325, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Electrostatic discharge protection circuit and semiconductor circuit" was invented by Ming-Fang Lai (Hsinchu, Taiwan), Liang-Yu Su (Yunlin County, Taiwan) and Hang Fan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an electrostatic discharge (ESD) protection circuit, coupled between a first reference terminal and a second reference terminal; the ESD protection circuit includes a first voltage divider, a second voltage divider, a first trigger circuit, a second trigger circuit, a first discharge compone...