US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 14 for "Circuits designed and manufactured with first and second fin boundaries" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,321, issued on Oct. 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Circuits designed and manufactured with first and second fin boundaries" was invented by Chung-Hui Chen (Hsinchu, Taiwan), Weichih Chen (Hsinchu, Taiwan), Tien-Chien Huang (Hsinchu, Taiwan), Chien-Chun Tsai (Jhudong Township, Taiwan), Ruey-Bin Sheen (Taichung, Taiwan), Tsung-Hsin Yu (Hsinchu, Taiwan), Chih-Hsien Chang (New Taipei, Taiwan) and Cheng-Hsiang Hsieh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including first finfet cells and second finfet cells. Each of the first finfet cells has an analog f...