US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 14 for "Back-end-of-line passive device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,674, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Back-end-of-line passive device structure" was invented by Tsung-Chieh Hsiao (Changhua County, Taiwan), Hsiang-Ku Shen (Hsinchu, Taiwan), Yuan-Yang Hsiao (Hsinchu, Taiwan), Chen-Chiu Huang (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device structure according to the present disclosure includes a passivation layer, a first conductor plate layer disposed on the passivation layer, a second conductor plate layer disposed over the first conductor layer, a third conductor plate layer disposed...