US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Vertical gate field effect transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,839, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical gate field effect transistor" was invented by Chun-Yuan Chen (Tainan, Taiwan), Ching-Chun Wang (Tainan, Taiwan), Hsiao-Hui Tseng (Tainan, Taiwan), Jen-Cheng Liu (Hsin-Chu, Taiwan), Jhy-Jyi Sze (Hsin-Chu, Taiwan), Shyh-Fann Ting (Tainan, Taiwan), Wei Chuang Wu (Tainan, Taiwan), Yen-Ting Chiang (Tainan, Taiwan), Chia Ching Liao (Tainan, Taiwan) and Yen-Yu Chen (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside ...