ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,860, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Using split word lines and switches for reducing capacitive loading on a memory system" was invented by Sheng-Chen Wang (Hsinchu, Taiwan), Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Yi-Ching Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods disclosed herein are related to a memory system. In one aspect, the memory system includes a first set of memory cells including a first string of memory cells and a second string of memory cells; and a first switch including: a first electro...