US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Three-dimensional memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,726, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device and method" was invented by Feng-Cheng Yang (Zhudong Township, Taiwan), Meng-Han Lin (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later ...