US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,806, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same" was invented by Po-Yu Huang (Hsinchu, Taiwan), I-Wen Wu (Hsinchu, Taiwan), Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a channel member, a gate structure disposed over the channel member, a source/drain feature connected to the channel member and adjacent to the gate structure, a source...