US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Semiconductor structure and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,804, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a first set of nanostructures that are stacked vertically and spaced apart from one another and formed in a first well, a source/drain feature adjoining the first set of nanostructures, a first top gate electrode layer above a topmost nanostructure in the first set of nanostructures, and an inner gate ...