US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Semiconductor memory device with vertical gate line" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,723, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory device with vertical gate line" was invented by Sheng-Chih Lai (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is provided. The semiconductor memory device includes a first access line extending in a horizontal direction, a first column of memory cells over the first access line, a second column of memory cells adjacent to the first column of memory cells, and a second access line over the first column of memory cells and the second column...