US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,096, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof" was invented by Sheng-Tsung Wang (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide semiconductor devices having conductive features with reduced height and increased width, and methods for forming the semiconductor devices. Particularly, sacrificial self-...