ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,089, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor devices and methods of manufacturing thereof" was invented by Te-Hsin Chiu (Miaoli County, Taiwan), Shih-Wei Peng (Hsinchu, Taiwan), Wei-An Lai (Taichung, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes doping a region through a first surface of a semiconductor substrate; forming a plurality of doped structures within the semiconductor substrate, wherein each of the plurality of doped structures extends along a vertical direction and is in contact with the doped region; for...