ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,769, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device with epitaxial bridge feature and methods of forming the same" was invented by Ting-Yeh Chen (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises semiconductor layers over a substrate, wherein the semiconductor layers are stacked up and separated from each other, each semiconductor layer includes a first portion in a first channel ...