US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,714, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structure" was invented by Chien-Hsuan Liu (Tainan, Taiwan), Chiang-Ming Chuang (Changhua, Taiwan), Chih-Ming Lee (Tainan, Taiwan), Kun-Tsang Chuang (Miaoli County, Taiwan), Hung-Che Liao (Tainan, Taiwan), Chia-Ming Pan (Tainan, Taiwan) and Hsin-Chi Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stacked gate structure, a plura...