US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,817, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a channel region; a gate dielectric layer on the channel region; a first work function tuning layer on the gate dielectric layer, the first work function tuning layer including a n-type work function metal; a barrier layer on the first work function tuning layer; a second work function tuning layer on the barrier layer, the sec...