US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Semiconductor device and formation method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,750, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and formation method thereof" was invented by Guan-Lin Chen (Hsinchu County, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Jung-Chien Cheng (Tainan, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes etching trenches in a substrate to form semiconductor fins, filling a first one of the trenches with a dielectric fin, forming an insulation material in a second one of the trenches, performing a...