US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Self-filling spacer structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,797, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Self-filling spacer structure" was invented by Kaochao Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates a method of manufacturing an integrated chip structure. The method forms an intermediate first material layer over a substrate and an intermediate second material layer on the intermediate first material layer. The intermediate second material layer is patterned to form an insulating layer. The intermediate first material layer is patterned to form a first material layer having an outermost sidewa...