US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "PUF memory devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,151, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"PUF memory devices and methods of manufacturing thereof" was invented by Meng-Sheng Chang (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array comprising a plurality of one-time-programmable (OTP) memory cells; a plurality of word lines (WLs); a plurality of bit lines (BLs); and a plurality of control gate (CG) lines. Each of the OTP memory cells comprises a first fuse resistor, a second fuse resistor, a first transistor, and a second transistor. The first fuse resistor and ...